power transistors 1 publication date: january 2003 sjd00117bed 2sc3944, 2sc3944a silicon npn epitaxial planar type for low-frequency driver and high power amplification complementary to 2sa1535 and 2sa1535a features ? excellent collector current i c characteristics of forward current transfer ratio h fe ? high transition frequency f t ? a complementary pair with 2sa1535 and 2sa1535a, is optimum for the driver stage of a 60 w to 100 w output amplifier ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification parameter symbol rating unit collector-base voltage 2sc3944 v cbo 150 v (emitter open) 2sc3944a 180 collector-emitter voltage 2sc3944 v ceo 150 v (base open) 2sc3944a 180 emitter-base voltage (collector open) v ebo 5v collector current i c 1a peak collector current i cp 1.5 a collector power t c = 25 cp c 15 w dissipation 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage 2sc3944 v ceo i c = 1 ma, i b = 0 150 v (base open) 2sc3944a 180 emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v collector-base cutoff current 2sc3944 i cbo v cb = 150 v, i e = 010 a (emitter open) 2sc3944a v cb = 180 v, i e = 010 forward current transfer ratio h fe1 * v ce = 10 v, i c = 150 ma 65 160 330 ? h fe2 v ce = 5 v, i c = 500 ma 50 100 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.5 2.0 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 1.0 2.0 v transition frequency f t v ce = 10 v, i c = 50 ma, f = 10 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 30 50 pf (common base, input open circuited) rank p q r s h fe1 65 to 110 90 to 155 130 to 220 185 to 330 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 ?0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
2sc3944, 2sc3944a 2 sjd00117bed p c t a v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb safe operation area 0 5 10 15 20 25 collector power dissipation p c (w) ambient temperature t a ( c) 0 160 40 120 80 (1) (2) (1) t c =ta (2) without heat sink (p c =2w) 0.01 0.1 1 0.01 10 1 0.1 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =10 ?25 c 25 c t c =100 c 0.01 0.01 0.1 1 1 0.1 10 base-emitter saturation voltage v be(sat) (v) collector current i c (a) i c /i b =10 t c =?25 c 25 c 100 c 0.01 0.1 1 1 1 000 100 10 forward current transfer ratio h fe collector current i c (a) v ce =10v t c =100 c ?25 c 25 c 0 100 300 200 400 ? 0.01 ? 0.1 ? 1 transition frequency f t (mhz) emitter current i e (a) v cb =10v f=10mhz t c =25 c 1 10 100 0 100 80 60 40 20 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25 c 0.001 1 0.01 0.1 1 10 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) single pulse t c =25 c t=10ms t=<50s 2sc3944a 2sc3944 dc i cp i c t=1ms
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